Strain-Gated Piezotronic Transistors Based on Vertical Zinc Oxide Nanowires
被引:114
作者:
Han, Weihua
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Han, Weihua
[1
,2
]
Zhou, Yusheng
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Zhou, Yusheng
[1
]
Zhang, Yan
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h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Zhang, Yan
[1
]
Chen, Cheng-Ying
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Chen, Cheng-Ying
[1
]
Lin, Long
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Lin, Long
[1
]
Wang, Xue
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Wang, Xue
[1
]
Wang, Sihong
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Wang, Sihong
[1
]
Wang, Zhong Lin
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Wang, Zhong Lin
[1
,3
]
机构:
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
[3] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing, Peoples R China
Strain-gated piezotronic transistors have been fabricated using vertically aligned ZnO nanowires (NWs), which were grown on GaN/sapphire substrates using a vapor-liquid-solid process. The gate electrode of the transistor is replaced by the internal crystal potential generated by strain, and the control over the transported current is at the interface between the nanowire and the top or bottom electrode. The current-voltage characteristics of the devices were studied using conductive atomic force microscopy, and the results show that the current flowing through the ZnO NWs can be tuned/gated by the mechanical force applied to the NWs. This phenomenon was attributed to the piezoelectric tuning of the Schottky barrier at the Au-ZnO junction, known as the piezotronic effect. Our study demonstrates the possibility of using Au droplet capped ZnO NWs as a transistor array for mapping local strain. More importantly, our design gives the possibility of fabricating an array of transistors using individual vertical nanowires that can be controlled independently by applying mechanical force/pressure over the top. Such a structure is likely to have important applications in high-resolution mapping of strain/force/pressure.
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Peking Univ, Dept Adv Mat & Nanotechnol, Coll Engn, Beijing 100084, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Fei, Peng
;
Yeh, Ping-Hung
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Yeh, Ping-Hung
;
Zhou, Jun
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h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Zhou, Jun
;
Xu, Sheng
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Xu, Sheng
;
Gao, Yifan
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h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Gao, Yifan
;
Song, Jinhui
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h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Song, Jinhui
;
Gu, Yudong
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Peking Univ, Dept Adv Mat & Nanotechnol, Coll Engn, Beijing 100084, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Gu, Yudong
;
Huang, Yanyi
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机构:
Peking Univ, Dept Adv Mat & Nanotechnol, Coll Engn, Beijing 100084, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Huang, Yanyi
;
Wang, Zhong Lin
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h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
机构:
IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USAIBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA
Leong, M
;
Doris, B
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机构:IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA
Doris, B
;
Kedzierski, J
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机构:IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA
Kedzierski, J
;
Rim, K
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机构:IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA
Rim, K
;
Yang, M
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机构:IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA
机构:
CEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France
CEA Grenoble, INAC SP2M SiNaPS, F-38054 Grenoble, FranceCEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France
Rosaz, G.
;
Salem, B.
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机构:
CEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, FranceCEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France
Salem, B.
;
Pauc, N.
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机构:
CEA Grenoble, INAC SP2M SiNaPS, F-38054 Grenoble, FranceCEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France
Pauc, N.
;
Potie, A.
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CEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, FranceCEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France
Potie, A.
;
Gentile, P.
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CEA Grenoble, INAC SP2M SiNaPS, F-38054 Grenoble, FranceCEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France
Gentile, P.
;
Baron, T.
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机构:
CEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, FranceCEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Peking Univ, Dept Adv Mat & Nanotechnol, Coll Engn, Beijing 100084, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Fei, Peng
;
Yeh, Ping-Hung
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Yeh, Ping-Hung
;
Zhou, Jun
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Zhou, Jun
;
Xu, Sheng
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h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Xu, Sheng
;
Gao, Yifan
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h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Gao, Yifan
;
Song, Jinhui
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h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Song, Jinhui
;
Gu, Yudong
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Peking Univ, Dept Adv Mat & Nanotechnol, Coll Engn, Beijing 100084, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Gu, Yudong
;
Huang, Yanyi
论文数: 0引用数: 0
h-index: 0
机构:
Peking Univ, Dept Adv Mat & Nanotechnol, Coll Engn, Beijing 100084, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Huang, Yanyi
;
Wang, Zhong Lin
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h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
机构:
IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USAIBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA
Leong, M
;
Doris, B
论文数: 0引用数: 0
h-index: 0
机构:IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA
Doris, B
;
Kedzierski, J
论文数: 0引用数: 0
h-index: 0
机构:IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA
Kedzierski, J
;
Rim, K
论文数: 0引用数: 0
h-index: 0
机构:IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA
Rim, K
;
Yang, M
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h-index: 0
机构:IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA
机构:
CEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France
CEA Grenoble, INAC SP2M SiNaPS, F-38054 Grenoble, FranceCEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France
Rosaz, G.
;
Salem, B.
论文数: 0引用数: 0
h-index: 0
机构:
CEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, FranceCEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France
Salem, B.
;
Pauc, N.
论文数: 0引用数: 0
h-index: 0
机构:
CEA Grenoble, INAC SP2M SiNaPS, F-38054 Grenoble, FranceCEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France
Pauc, N.
;
Potie, A.
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h-index: 0
机构:
CEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, FranceCEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France
Potie, A.
;
Gentile, P.
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h-index: 0
机构:
CEA Grenoble, INAC SP2M SiNaPS, F-38054 Grenoble, FranceCEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France
Gentile, P.
;
Baron, T.
论文数: 0引用数: 0
h-index: 0
机构:
CEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, FranceCEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France