Low dimensional nanostructured InGaN multi-quantum wells by selective area heteroepitaxy

InGaN/GaN multiple quantum wells (MQWs) nanostructures were demonstrated on high density GaN nanorod arrays with controllable size by using template-assisted selective area heteroepitaxial growth. The nanostructures with average diameter of similar to 60 nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO 2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminium oxide (AAO) template as an etching mask. The nanostructured InGaN MQWs demonstrates low defect density, confirmed by high resolution transmission electron microscopy. More importantly, InGaN MQWs nanostructures demonstrate a higher photoluminescence in intensity, compared to that of a planar GaN. This is contributed to the improvement of light extraction due to the faceted nanostructures and the improvement in crystal quality. In addition, more Indium incorporation has been demonstrated compared to the control InGaN MQWs due to strain-relaxation in GaN nanorods. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim