Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy

被引：52
|
作者：
Porti, M
Nafría, M
Aymerich, X
Olbrich, A
Ebersberger, B
机构：
[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain
[2] Infineon Technol AG, D-81730 Munich, Germany
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 26期
关键词：
D O I：
10.1063/1.1382624
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of approximate to 100 nm(2)). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/release of single charges in the defects generated during stress. (C) 2001 American Institute of Physics.
引用
收藏
页码：4181 / 4183
页数：3
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