High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors

被引：19
|
作者：
Duez, V [1 ]
Melique, X [1 ]
Vanbesien, O [1 ]
Mounaix, P [1 ]
Mollot, F [1 ]
Lippens, D [1 ]
机构：
[1] Univ Lille, IEMN, F-59652 Villeneuve Dascq, France
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 19期
关键词：
D O I：
10.1049/el:19981328
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report a very high capacitance ratio of similar to 10:1 for a heterostructure varactor. To realise this, a new InGaAs/AlAs quantum well-barrier scheme has been fabricated in GaAs technology. The capacitance modulation involves carrier dynamics via the quantum well eigenstates in contrast to the conventional depletion operation mode.
引用
收藏
页码：1860 / 1861
页数：2
相关论文
共 50 条
  • [21] Capacitance spectroscopy of single-barrier GaAs/AlAs/GaAs structures containing InAs quantum dots
    Belyaev, AE
    Eaves, L
    Main, PC
    Polimeni, A
    Stoddart, ST
    Henini, M
    ACTA PHYSICA POLONICA A, 1998, 94 (02) : 245 - 249
  • [22] Photoluminescence of InGaAs/GaAs single quantum well adjacent to a selectively oxidized AlAs layer
    Pratt, AR
    Takamori, T
    Kamijoh, I
    APPLIED PHYSICS LETTERS, 1997, 71 (10) : 1394 - 1396
  • [23] Pseudomorphic HEMT quantum well AlGaAs/InGaAs/GaAs with AlAs:δ-Si donor layer
    Vinichenko, A. N.
    Vasil'evskii, I. S.
    1ST INTERNATIONAL TELECOMMUNICATION CONFERENCE ADVANCED MICRO- AND NANOELECTRONIC SYSTEMS AND TECHNOLOGIES, 2016, 151
  • [24] The polaron in a GaAs/AlAs quantum well
    Mora-Ramos, ME
    Contreras-Solorio, DA
    PHYSICA B-CONDENSED MATTER, 1998, 253 (3-4) : 325 - 334
  • [25] Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
    Kulbachinskii, V. A.
    Vasil'evskii, I. S.
    Lunin, R. A.
    Galistu, G.
    de Visser, A.
    Galiev, G. B.
    Shirokov, S. S.
    Mokerov, V. G.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (03) : 222 - 228
  • [26] GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES
    ZHANG, YH
    LI, YX
    JIANG, DH
    YANG, XP
    ZHANG, PH
    APPLIED PHYSICS LETTERS, 1994, 64 (25) : 3416 - 3418
  • [27] Fabrication and Optical Properties of GaAs/InGaAs/GaAs Core-multishell Nanowire Quantum Well Heterostructure
    Yan, Xin
    Zhang, Xia
    Li, Junshuai
    Wang, Sijia
    Fan, Shuyu
    Wei, Wei
    Huang, Yongqing
    Ren, Xiaomin
    2014 OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE AND AUSTRALIAN CONFERENCE ON OPTICAL FIBRE TECHNOLOGY (OECC/ACOFT 2014), 2014, : 56 - 57
  • [28] High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs-GaAs-InGaAs-InAs heterostructure diode laser operation
    Walter, G
    Chung, T
    Holonyak, N
    APPLIED PHYSICS LETTERS, 2002, 80 (07) : 1126 - 1128
  • [29] Optimum barrier thickness study for the InGaAs/InAlAs/AlAs heterostructure barrier varactor diodes
    Emadi, T. A.
    Bryllert, T.
    Sadeghi, M.
    Vukusic, J.
    Stake, J.
    APPLIED PHYSICS LETTERS, 2007, 90 (01)
  • [30] Photoluminescence from InGaAs/GaAs quantum well regrown on a buried patterned oxidized AlAs layer
    Chouchane, F.
    Makhloufi, H.
    Calvez, S.
    Fontaine, C.
    Almuneau, G.
    APPLIED PHYSICS LETTERS, 2014, 104 (06)
12345