High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors

被引：19

作者：

Duez, V ^{[1
]}

Melique, X ^{[1
]}

Vanbesien, O ^{[1
]}

Mounaix, P ^{[1
]}

Mollot, F ^{[1
]}

Lippens, D ^{[1
]}

机构：

[1] Univ Lille, IEMN, F-59652 Villeneuve Dascq, France

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 19期

关键词：

D O I：

10.1049/el:19981328

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report a very high capacitance ratio of similar to 10:1 for a heterostructure varactor. To realise this, a new InGaAs/AlAs quantum well-barrier scheme has been fabricated in GaAs technology. The capacitance modulation involves carrier dynamics via the quantum well eigenstates in contrast to the conventional depletion operation mode.

引用

页码：1860 / 1861

页数：2

共 5 条

[1] Millimetre-wave frequency tripling using stacked heterostructure-barrier varactors on InP [J].