High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors

被引：19
|
作者：
Duez, V [1 ]
Melique, X [1 ]
Vanbesien, O [1 ]
Mounaix, P [1 ]
Mollot, F [1 ]
Lippens, D [1 ]
机构：
[1] Univ Lille, IEMN, F-59652 Villeneuve Dascq, France
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 19期
关键词：
D O I：
10.1049/el:19981328
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report a very high capacitance ratio of similar to 10:1 for a heterostructure varactor. To realise this, a new InGaAs/AlAs quantum well-barrier scheme has been fabricated in GaAs technology. The capacitance modulation involves carrier dynamics via the quantum well eigenstates in contrast to the conventional depletion operation mode.
引用
收藏
页码：1860 / 1861
页数：2
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