Migration and Localization of Metal Atoms on Strained Graphene

被引：303

作者：

Cretu, Ovidiu ^{[1
]}

Krasheninnikov, Arkady V. ^{[2
,3
]}

Rodriguez-Manzo, Julio A. ^{[1
]}

Sun, Litao ^{[1
,4
]}

Nieminen, Risto M. ^{[3
]}

Banhart, Florian ^{[1
]}

机构：

[1] Univ Strasbourg, UMR CNRS 7504, Inst Phys & Chim Mat, F-67034 Strasbourg, France

[2] Univ Helsinki, Dept Phys, FI-00014 Helsinki, Finland

[3] Aalto Univ, Dept Appl Phys, FI-00076 Aalto, Finland

[4] Southeast Univ, Minist Educ, Key Lab MEMS, SEU FEI Nanopico Ctr, Nanjing 210096, Peoples R China

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 19期

基金：

中国国家自然科学基金; 芬兰科学院;

关键词：

CARBON NANOTUBES; ELECTRON; GRAPHITE; DIFFUSION; VACANCIES; SURFACES; DEFECT;

D O I：

10.1103/PhysRevLett.105.196102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Reconstructed point defects in graphene are created by electron irradiation and annealing. By applying electron microscopy and density functional theory, it is shown that the strain field around these defects reaches far into the unperturbed hexagonal network and that metal atoms have a high affinity to the nonperfect and strained regions of graphene. Metal atoms are attracted by reconstructed defects and bonded with energies of about 2 eV. The increased reactivity of the distorted pi-electron system in strained graphene allows us to attach metal atoms and to tailor the properties of graphene.

引用

页数：4

共 30 条

[1] Interactions between metals and carbon nanotubes: at the interface between old and new materials [J].