Switching Dynamics of Ferroelectric Zr-Doped HfO2

被引：92

作者：

Alessandri, Cristobal ^{[1
,2
]}

Pandey, Pratyush ^{[1
]}

Abusleme, Angel ^{[2
]}

Seabaugh, Alan ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] Pontificia Univ Catolica Chile, Dept Elect Engn, Santiago 7820436, Chile

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 11期

基金：

美国国家科学基金会;

关键词：

Ferroelectric devices; analytical models; hafnium compounds; KINETICS;

D O I：

10.1109/LED.2018.2872124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric Zr-doped HfO2 (HZO) is a promising candidate for steep slope transistors and memory technology. For these applications, it is essential to understand and optimize the switching dynamics of the ferroelectric film. In this letter, we characterizethe polarization reversal of an 8 nm-thick HZO film deposited by the atomic layer deposition with voltage pulses varying in amplitude (0.8-2 V) and duration (200 ns-7.6 ms). We show that the measurements are well described by a nucleation limited switching model, which enables extraction of the minimum switching time and the probability distribution of local electric field variations in the polycrystalline film. The close model fit spanning 5 orders of magnitude in pulse duration indicates the applicability of this model to HZO. This characterization framework can be used to quantify, compare, and optimize the switching dynamics of ferroelectric HZO.

引用

页码：1780 / 1783

页数：4

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