Defect engineering in wide-bandgap perovskites for efficient perovskite-silicon tandem solar cells

Wide-bandgap (WBG) mixed-halide perovskites show promise of realizing efficient tandem solar cells but at present suffer from large open-circuit voltage loss and the mechanism is still unclear. Here we show that WBG perovskites with iodide-bromide compositions have an increased concentration of deep traps induced by iodide interstitials, which limits performance of WBG perovskite cells. We employ tribromide ions to suppress the iodide interstitial formation and thus reduce charge recombination in bladed WBG perovskite films of Cs(0.1)FA(0.2)MA(0.7)Pb(I0.85Br0.15)(3). The 1-mu m-thick opaque WBG perovskite solar cells have an efficiency of 21.9%, a small open-circuit voltage deficit of 0.40 V and a large fill factor of 83%. The efficiency of the best-performing monolithic perovskite-silicon tandem cell using this perovskite reaches 28.6%. The tribromide addition also suppresses light-induced phase segregation in WBG perovskites and thus enhance device stability. Encapsulated tandem cells maintain 93% of their initial efficiency after operation for 550 h. Efficient perovskite-silicon tandem solar cells with an efficiency of up to 28.6% are reported by employing tribromide ions to reduce charge recombination.