Thermoelectric performance of SnS and SnS-SnSe solid solution

被引:172
作者
Han, Ye-Mao [1 ,2 ]
Zhao, Jie [1 ,2 ]
Zhou, Min [1 ]
Jiang, Xing-Xing [2 ,3 ]
Leng, Hua-Qian [1 ,2 ]
Li, Lai-Feng [1 ]
机构
[1] Chinese Acad Sci, Key Lab Cryogen, Tech Inst Phys & Chem, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 10049, Peoples R China
[3] Chinese Acad Sci, Beijing Ctr Crystal R&D, Key Lab Funct Crystals & Laser Tech, Tech Inst Phys & Chem, Beijing 100190, Peoples R China
关键词
LATTICE THERMAL-CONDUCTIVITY; DISORDER; FIGURE; MERIT; ENHANCEMENT; EFFICIENCY;
D O I
10.1039/c4ta06955b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Solid solution is a potential way to optimize thermoelectric performance for its low thermal conductivity compared to those of the constituent compounds because of the phonon scattering from disordered atoms. Tin(II) sulfide (SnS) shows analogous band structure and electrical properties with tin selenide (SnSe), which was the motivation for investigating the thermoelectric performance of SnS and SnS-SnSe solid solution system. SnS compound and SnS1-xSex (0 < x < 1) solid solution were fabricated using the melting method and they exhibited anisotropic thermoelectric performance along the parallel and perpendicular to the pressing directions. For the SnS compound, the maximum zT(parallel to) value is 0.19 at 823 K along the parallel to pressing direction, which is higher than that along the perpendicular to the pressing direction (zT(perpendicular to) = 0.16). The zT values of SnS0.Se-5(0.5) and SnS0.2Se0.8 were higher than those of the SnS compound and a maximum zT value of 0.82 was obtained for SnS0.2Se0.8 at 823 K, which is more than four times higher than that of SnS.
引用
收藏
页码:4555 / 4559
页数:5
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