High internal quantum efficiency ZnO nanorods prepared at low temperature

被引：30
作者：
Chen, Jie [1 ]
Ae, L. [1 ]
Aichele, Ch. [1 ]
Lux-Steiner, M. Ch. [1 ]
机构：
[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 16期
关键词：
D O I：
10.1063/1.2910769
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A preparation process for ZnO nanorods (or nanowires) by use of electrochemical deposition in an aqueous solution of zinc nitrate and nitric acid at temperatures 75 degrees C was established. The surface morphologies of ZnO nanostructures can be adjusted with constant high internal quantum efficiency (IQE). The as-grown ZnO nanostructures exhibit a dominant and intense near-band-edge emission. The ZnO nanostructures present an IQE of similar to 28% measured by a He-Cd laser under excitation power density of similar to 22 W/cm(2) at a wavelength of 325 nm. (c) 2008 American Institute of Physics.
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