Influence of Deposition Conditions on Silicon Nanoclusters in Silicon Nitride Films Grown by Laser-Assisted CVD Method

被引：1

作者：

Tsai, Tai-Cheng ^{[1
]}

Lou, Li-Ren ^{[1
,2
]}

Lee, Ching-Ting ^{[1
,2
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2011年 / 10卷 / 02期

关键词：

Laser-assisted CVD(LACVD) system; photoluminescence (PL); quantum confinement effect; Si nanoclusters; silicon nitride matrix; QUANTUM DOTS; PHOTOLUMINESCENCE; LUMINESCENCE; ABSORPTION;

D O I：

10.1109/TNANO.2009.2036609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Crystalline-silicon-nanocluster-embedded silicon nitride films were deposited at low temperature using a laser-assisted CVD (LACVD) system with various reactant gas flow rates and assisting laser power densities. The photoluminescence (PL) performances of the resultant films were studied, showing a systematic spectra blue shift, and the enhancement of PL intensity with the increase of the reactant NH3/SiH4 gas flow rate ratio and the assisting laser power density used in the film deposition. The spectra blue shift can be ascribed to the decrease of the size of the nanoclusters in the films. It is also deduced that both the reduction of the amount of nonradiative centers in the nanoclusters and the increase of the number density of the nanoclusters in the film are responsible for the enhancement of the PL intensity. The film growth process is also briefly discussed.

引用

页码：197 / 202

页数：6

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