Bulk-defect dependent adsorption on a metal oxide surface:: S/TiO2(110)

被引：34

作者：

Hebenstreit, ELD

Hebenstreit, W

Geisler, H

Ventrice, CA

Sprunger, PT

Diebold, U ^{[1
]}

机构：

[1] Tulane Univ, Dept Phys, New Orleans, LA 70118 USA

[2] Vienna Univ Technol, Inst Allgemeine Phys, A-1040 Vienna, Austria

[3] Xavier Univ, Dept Chem, New Orleans, LA 70125 USA

[4] Univ New Orleans, Dept Phys, New Orleans, LA 70148 USA

[5] Louisiana State Univ, CAMD, Baton Rouge, LA 70806 USA

来源：

SURFACE SCIENCE | 2001年 / 486卷 / 03期

关键词：

scanning tunneling microscopy; photoelectron spectroscopy; titanium oxide; sulphur; low index single crystal surfaces; surface defects; chemisorption; diffusion and migration;

D O I：

10.1016/S0039-6028(01)01067-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The adsorption of molecular sulfur on TiO2(110)(1 x 1) has been studied with scanning tunneling microscopy and photoelectron spectroscopy. At room temperature S binds dissociatively to 5-fold coordinated Ti atoms and oxygen vacancies. At elevated temperatures (120-440 degreesC) sulfur replaces surface oxygen atoms. Evidence was found that the reduction state of TiO2 crystals strongly affects the surface coverage of S at elevated temperatures. The rate of the O-S site exchange is kinetically limited by the arrival of diffusing bulk defects at the surface. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：L467 / L474

页数：8

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