A new approach for 3D reconstruction from bright field TEM imaging: Beam precession assisted electron tomography

被引:33
作者
Rebled, J. M. [1 ,3 ]
Yedra, Ll. [1 ]
Estrade, S. [1 ,2 ]
Portillo, J. [1 ,2 ]
Peiro, F. [1 ]
机构
[1] Univ Barcelona, LENS MIND IN2UB, Dept Elect, E-08028 Barcelona, Spain
[2] CCiT UB, TEM MAT, Barcelona 08028, Spain
[3] Inst Ciencia Mat Barcelona CSIC, Bellaterra 08193, Spain
关键词
Electron beam precession; Electron tomography; Diffraction contrast; Transmission electron microscopy; Defects; AUTOMATED DIFFRACTION TOMOGRAPHY; CRACK-TIP DISLOCATIONS; SURFACE-ROUGHNESS; PART II; MOBILITY; TEMPERATURE; CHANNELS; GROWTH;
D O I
10.1016/j.ultramic.2011.06.002
中图分类号
TH742 [显微镜];
学科分类号
摘要
The successful combination of electron beam precession and bright field electron tomography for 3D reconstruction is reported. Beam precession is demonstrated to be a powerful technique to reduce the contrast artifacts due to diffraction and curvature in thin foils. Taking advantage of these benefits, Precession assisted electron tomography has been applied to reconstruct the morphology of Sn precipitates embedded in an Al matrix, from a tilt series acquired in a range from +49 degrees to -61 degrees at intervals of 2 degrees and with a precession angle of 0.6 degrees in bright field mode. The combination of electron tomography and beam precession in conventional TEM mode is proposed as an alternative procedure to obtain 3D reconstructions of nano-objects without a scanning system or a high angle annular dark field detector. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:1504 / 1511
页数:8
相关论文
共 43 条
[31]   Surface roughness in InGaAs channels of high electron mobility transistors depending on the growth temperature: Strain induced or due to alloy decomposition [J].
Peiro, F ;
Cornet, A ;
Morante, JR ;
Beck, M ;
Py, MA .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) :7537-7541
[32]   DOUBLE-TILT ELECTRON TOMOGRAPHY [J].
PENCZEK, P ;
MARKO, M ;
BUTTLE, K ;
FRANK, J .
ULTRAMICROSCOPY, 1995, 60 (03) :393-410
[33]   Three-dimensional nanoscale composition mapping of semiconductor nanowires [J].
Perea, DE ;
Allen, JE ;
May, SJ ;
Wessels, BW ;
Seidman, DN ;
Lauhon, LJ .
NANO LETTERS, 2006, 6 (02) :181-185
[34]  
Seidman D.N., 2009, MRS BULL, V34, P17
[35]   Crack tip dislocations revealed by electron tomography in silicon single crystal [J].
Tanaka, Masaki ;
Higashida, Kenji ;
Kaneko, Kenji ;
Hata, Satoshi ;
Mitsuhara, Masatoshi .
SCRIPTA MATERIALIA, 2008, 59 (08) :901-902
[36]   3-D structures of crack-tip dislocations and their shielding effect revealed by electron tomography [J].
Tanaka, Masaki ;
Honda, Masaki ;
Sadamatsu, Sunao ;
Higashida, Kenji .
JOURNAL OF ELECTRON MICROSCOPY, 2010, 59 :S55-S60
[37]   The chemical application of high-resolution electron tomography: Bright field or dark field? [J].
Thomas, JM ;
Midgley, PA ;
Yates, TJV ;
Barnard, JS ;
Raja, R ;
Arslan, I ;
Weyland, M .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2004, 43 (48) :6745-6747
[38]   Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography [J].
Verheijen, Marcel A. ;
Algra, Rienk E. ;
Borgstrom, Magnus T. ;
Immink, George ;
Sourty, Erwan ;
van Enckevort, Willem J. P. ;
Vlieg, Elias ;
Bakkers, Erik P. A. M. .
NANO LETTERS, 2007, 7 (10) :3051-3055
[39]   DOUBLE CONICAL BEAM-ROCKING SYSTEM FOR MEASUREMENT OF INTEGRATED ELECTRON-DIFFRACTION INTENSITIES [J].
VINCENT, R ;
MIDGLEY, PA .
ULTRAMICROSCOPY, 1994, 53 (03) :271-282
[40]   Extending energy-filtered transmission electron microscopy (EFTEM) into three dimensions using electron tomography [J].
Weyland, M ;
Midgley, PA .
MICROSCOPY AND MICROANALYSIS, 2003, 9 (06) :542-555