Visualization of Ultrafast Electron Dynamics Using Time-Resolved Photoemission Electron Microscopy

被引：1
作者：
Fukumoto, K. [1 ,2 ]
Yamada, Y. [1 ]
Matsuki, T. [1 ]
Onda, K. [1 ,3 ]
Noguchi, T. [1 ]
Mizokuchi, R. [1 ]
Oda, S. [1 ]
Koshihara, S. [1 ,2 ]
机构：
[1] Tokyo Inst Technol, Meguro Ku, Tokyo 1528551, Japan
[2] JST CREST, Kawaguchi, Saitama 3320012, Japan
[3] JST PRESTO, Kawaguchi, Saitama 3320012, Japan
来源：
ULTRAFAST PHENOMENA XIX | 2015年 / 162卷
关键词：
D O I：
10.1007/978-3-319-13242-6_82
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We constructed a TR-PEEM which can directly image the photo-generated electron dynamics in semiconductor on nm and fs scales. Carrier transport properties relating to device performance, carrier lifetime, drift velocity and mobility, are investigated.
引用
收藏
页码：337 / 340
页数：4
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