Tin selenide synthesized by a chemical route: the effect of the annealing conditions in the obtained phase

被引：23

作者：

Bernardes-Silva, AO ^{[1
]}

Mesquita, AF

Neto, ED

Porto, AO

de Lima, GM

Ardisson, JD

Lameiras, FS

机构：

[1] CDTN, CNEN, Lab Mat & Combust Nucl, BR-30123970 Belo Horizonte, MG, Brazil

[2] Univ Fed Minas Gerais, ICEx, Dept Quim, BR-31270901 Belo Horizonte, MG, Brazil

[3] CDTN, CNEN, BR-30123970 Belo Horizonte, MG, Brazil

来源：

SOLID STATE COMMUNICATIONS | 2005年 / 135卷 / 11-12期

关键词：

semiconductor; tin selenide; chemical synthesis; Sn-119; Mossbauer; X-ray diffraction; phase transitions;

D O I：

10.1016/j.ssc.2005.06.014

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of different annealing conditions over the tin selenide obtained from a chemical route are presented in this work. The tin selenide was annealed at 300 and 600 degrees C under hydrogen, nitrogen and argon atmospheres. The materials were characterized by X-ray diffraction and Sn-119 Mossbauer spectroscopy. In the 'as synthetized' material a considerably amount of tin oxide (57%) was detected by Mossbauer spectroscopy. After thermal annealing the amount of these oxides varied according to the temperature and atmosphere used. At 600 degrees C/hydrogen the smallest amount of tin oxide was obtained (20%). These oxides were formed during the synthetic procedure through the hydrolysis of tin chloride used as reagent. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：677 / 682

页数：6

共 28 条

[1] TIN SULFUR AND TIN SELENIUM PHENYLATED RING-SYSTEMS AS ORGANOMETALLIC PRECURSORS TO TIN SULFIDE AND TIN SELENIDE [J].

BAHR, SR ;

BOUDJOUK, P ;

MCCARTHY, GJ .

CHEMISTRY OF MATERIALS, 1992, 4 (02) :383-388

[2] Electrical properties of cadmium telluride films synthesized in a thermal field with a temperature gradient [J].

Belyaev, AP ;

Rubets, VP ;

Nuzhdin, MY .

SEMICONDUCTORS, 2003, 37 (06) :646-648

[3]

BERNARDESSILVA AC, IN PRESS

[4] Spin-glass-like behavior in the selenide Cr2Sn3Se7 [J].

Bodenan, F ;

Cajipe, VB ;

Danot, M ;

Ouvrard, G .

JOURNAL OF SOLID STATE CHEMISTRY, 1998, 137 (02) :249-254

[5] Synthesis of tin oxide nanocrystalline phases via use of tin(II) halide precursors [J].

Deng, HM ;

Lamelas, FJ ;

Hossenlopp, JM .

CHEMISTRY OF MATERIALS, 2003, 15 (12) :2429-2436

[6] Defects-induced volume deviations in ZnSe [J].

Ebe, H ;

Sakurai, F ;

Chen, ZQ ;

Uedono, A ;

Zhang, BP ;

Segawa, Y ;

Suto, K ;

Nishizawa, J .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) :1566-1569

[7] Room temperature growth of SnSe nanorods from aqueous solution [J].

Han, QF ;

Zhu, Y ;

Wang, X ;

Ding, WP .

JOURNAL OF MATERIALS SCIENCE, 2004, 39 (14) :4643-4646

[8]

Hua Y., 2003, MATER LETT, V57, P3137

[9] Synthesis of metallacycles by oxidative addition of Sn-S, Sn-Se, Sn-Te, and Ge-Te containing precursors to platinum(II) [J].

Janzen, MC ;

Jenkins, HA ;

Rendina, LM ;

Vittal, JJ ;

Puddephatt, RJ .

INORGANIC CHEMISTRY, 1999, 38 (09) :2123-2130

[10] Dissolution of A15 in lamellar metallic dichalcogenides:: Mossbauer study of the superconductor SnNb5Se9 [J].

Leblanc-Soreau, A ;

Molinié, P ;

Jumas, JC .

PHYSICA B-CONDENSED MATTER, 2002, 321 (1-4) :138-142

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