Dependence of film texture on substrate and growth conditions for CdTe films deposited by close-spaced sublimation

被引:36
作者
Gao, Junning [1 ]
Jie, Wanqi [1 ]
Yuan, Yanyan [1 ]
Wang, Tao [1 ]
Zha, Gangqiang [1 ]
Tong, Junli [1 ]
机构
[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Sch Mat Sci & Engn, Xian, Peoples R China
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2011年 / 29卷 / 05期
关键词
THIN-FILMS; EVOLUTION; LAYERS;
D O I
10.1116/1.3610177
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The texture of CdTe films deposited via close-spaced sublimation (CSS) was studied. Different substrates were used, including Si(100), fluorine-doped SnO2 (FTO), and CdS, and different growth conditions were applied. The texture behaviors of each sample were evaluated based on its XRD spectrum and are found to be dependent on both the substrate and the growth conditions. The texture strength is found to be, in order, Si(100)>FTO>CdS at a substrate temperature of 763 K under 100 Pa Ar, which is the opposite of the order of the surface roughness of the substrates. The textures of the films on FTO and chemical bath deposition (CBD)-CdS substrates, especially on CBD-CdS, are very sensitive to the growth conditions, whereas those on Si( 100) are not. It is found that the texture is strengthened at elevated temperatures and suppressed under decreased ambient pressure. It is also found that the textured films are composed of both ( 111) and (511) texture components, which is believed to be the result of the twinning in ( 111) oriented grains. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3610177]
引用
收藏
页数:6
相关论文
共 26 条
[1]   Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition [J].
Aarik, J ;
Aidla, A ;
Mändar, H ;
Sammelselg, V ;
Uustare, T .
JOURNAL OF CRYSTAL GROWTH, 2000, 220 (1-2) :105-113
[2]   Plasticity induced texture development in thick polycrystalline CdTe: Experiments and modeling [J].
Consonni, V. ;
Feuillet, G. ;
Gergaud, P. .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)
[3]   HETEROEPITAXY OF CDTE ON GAAS AND SILICON SUBSTRATES [J].
FAURIE, JP ;
SPORKEN, R ;
CHEN, YP ;
LANGE, MD ;
SIVANANTHAN, S .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 16 (1-3) :51-56
[4]   High efficiency CSSCdTe solar cells [J].
Ferekides, CS ;
Marinskiy, D ;
Viswanathan, V ;
Tetali, B ;
Palekis, V ;
Selvaraj, P ;
Morel, DL .
THIN SOLID FILMS, 2000, 361 (361) :520-526
[5]   Thick GaN layers grown by hydride vapor-phase epitaxy:: hetero- versus homo-epitaxy [J].
Hageman, PR ;
Kirilyuk, V ;
Corbeek, WHM ;
Weyher, JL ;
Lucznik, B ;
Bockowski, M ;
Porowski, S ;
Müller, S .
JOURNAL OF CRYSTAL GROWTH, 2003, 255 (3-4) :241-249
[6]   Control of polarity of heteroepitaxial ZnO films by interface engineering [J].
Hong, SK ;
Hanada, T ;
Chen, YF ;
Ko, HJ ;
Yao, T ;
Imai, D ;
Araki, K ;
Shinohara, M .
APPLIED SURFACE SCIENCE, 2002, 190 (1-4) :491-497
[7]   Type conversion of polycrystalline CdZnTe thick films by multiple compensation [J].
Kim, KiHyun ;
Choa, ShinHang ;
Seo, JongHee ;
Won, JaeHo ;
Hong, JinKi ;
Kim, SunUng .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2008, 584 (01) :191-195
[8]   Textures of thin copper films [J].
Kuschke, WM ;
Kretschmann, A ;
Keller, RM ;
Vinci, RP ;
Kaufmann, C ;
Arzt, E .
JOURNAL OF MATERIALS RESEARCH, 1998, 13 (10) :2962-2968
[9]   Effects of dislocation on electron work function of metal surface [J].
Li, W ;
Li, DY .
MATERIALS SCIENCE AND TECHNOLOGY, 2002, 18 (09) :1057-1060
[10]   On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors [J].
Lovergine, N ;
Cola, A ;
Prete, P ;
Tapfer, L ;
Bayhan, M ;
Mancini, AM .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 458 (1-2) :1-6