Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells

被引：146

作者：

Rodbell, Kenneth P. ^{[1
]}

Heidel, David F. ^{[1
]}

Tang, Henry H. K. ^{[1
]}

Gordon, Michael S. ^{[1
]}

Oldiges, Phil ^{[2
]}

Murray, Conal E. ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Syst Technol Grp, Hopewell Jct, NY 12533 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 06期

关键词：

alpha particles; direct ionization; protons; radiation effects; simulations; soft error rate;

D O I：

10.1109/TNS.2007.909845

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental data are presented showing that low energy (< 2 MeV) proton irradiation can upset exploratory 65 nm node, Silicon-On-Insulator circuits. Alpha particle SER data, modeling and simulation results provide a plausible mechanism. This work suggests that track structures need to be understood and effectively modeled, especially for small, modern devices.

引用

页码：2474 / 2479

页数：6

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