Electrical properties of thermally evaporated nickel-dimethylglyoxime thin films

Thin Bis-(dimethylglyoximato)nickel(II) [Ni(DMG)(2)] films of amorphous and crystalline structures were prepared by vacuum deposition on Si (P) substrates. The films were characterised by X-ray fluorescence and X-ray diffraction. The constructed Al/Ni(DMG)(2)/Si(P) metalinsulator-semiconductor devices were characterised by the measurement of the gate-voltage dependence of their capacitance and ac conductance, from which the surface states density D-it of insulator/semiconductor interface and the density of the fixed charges in the oxide were determined. The ac electrical conduction and dielectric properties of the Ni(DMG)(2)-Silicon structure were studied at room temperature. The data of the ac measurements of the annealed films follow the correlated barrier-hopping CBH mode, from which the fundamental absorption bandgap, the minimum hopping distance, and other parameters of the model were determined. (c) 2005 Elsevier Ltd. All rights reserved.