A 2 Watt, sub-dB noise figure GaN MMIC LNA-PA amplifier with multi-octave bandwidth from 0.2-8 GHz

被引:39
作者
Kobayashi, Kevin W. [1 ]
Chen, YaoChung [2 ]
Smorchkova, Ioulia [2 ]
Tsai, Roger [2 ]
Wojtowicz, Mike [2 ]
Oki, Aaron [2 ]
机构
[1] SIRENZA MICRODEVICES, Torrance, CA 90505 USA
[2] One Space Pk, Northrop Grumman Space & Technol, Redondo Beach, CA 90278 USA
来源
2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 | 2007年
关键词
GaNHEMT; Low Noise Amplifier (LNA); Power Amplifier (PA); dynamic range;
D O I
10.1109/MWSYM.2007.379977
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports on a 0.2-8 GHz high dynamic range GaN MMIC LNA-PA which achieves sub-dB noise figure and a P1dB of 2 Wafts. The GaN MMIC utilizes a 0.2um AlGaN/GaN-SiC HEMT technology with an fT similar to 75 GHz. At high power bias (15V/400mA), the NMC amplifier achieves Sub-dB NF similar to 0.7-0.9 dB over a 2-8 GHz band. At low bias(12V, 200mA), the amplifier achieves similar to 0.5dB over the same band. Thi is believe to be the lowest NF reported for a multi-octave MMIC amplifier in the S- and C-band frequency range. In addition, the amplifier obtains ultra high linearity with an OIP3 of 43.2-46.5 dBm and P1dB of 32.8-33.2 dBm (2Watts) over a 2-6 GHz bandwidth. The PAE at P1dB is similar to 28.6-31%. The Psat is 34.2 dBm with 39% PAE @ 2 GHz. To our knowledge, this is the first report of a multi-octave MMIC amplifier with sub-dB NF and a Pout > 2 Watt.
引用
收藏
页码:619 / 622
页数:4
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