Optically pumped stimulated emission from cubic GaN/AlGaN double heterostructure grown on GaAs(100) using metalorganic vapor-phase epitaxy

被引：9

作者：

Nakadaira, A ^{[1
]}

Tanaka, H ^{[1
]}

机构：

[1] NTT, Integrated Informat & Energy Syst Labs, Tokyo 1808585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

GaN; AlGaN; cubic; stimulated emission; MOVPE;

D O I：

10.1016/S0022-0248(98)00326-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A cubic GaN/AlGaN double heterostructure has been grown on a GaAs(1 0 0) substrate by metalorganic vapor-phase epitaxy under low V/III ratio conditions, resulting in a flat GaN layer. Stimulated emission was observed at 387 nm from a cleaved edge of an optically pumped cubic GaN/AlGaN double heterostructure at 34 K. The threshold power density was 1.1 MW/cm(2), which is lower than that of a single heterostructure device. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：411 / 414

页数：4

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