High-performance three-dimensional on-chip inductors in SOICMOS technology for monolithic RF circuit applications

被引：0

作者：

Kim, J ^{[1
]}

Plouchart, JO ^{[1
]}

Zamdmer, N ^{[1
]}

Fong, N ^{[1
]}

Lu, LH ^{[1
]}

Tan, Y ^{[1
]}

Jenkins, KA ^{[1
]}

Sherony, M ^{[1
]}

Groves, R ^{[1
]}

Kumar, M ^{[1
]}

Ray, A ^{[1
]}

机构：

[1] IBM Corp, Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA

来源：

2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents high-Q and high-inductance-density on-chip inductors fabricated on high-resistivity substrate (HRS) using a 0.12 mum SOI CMOS technology with 8 copper metal layers. A peak Q of 52 is obtained at 5 GHz for a 0.6 nH STP (Single-turn, multiple metal levels in Parallel) inductor. An inductance density of 5302 fH/mum(2) is obtained for a 42 nH MTS (Multi-turn, multiple metal layers in Series) inductor.

引用

页码：A77 / A80

页数：4

共 11 条

[1] Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates [J].

Burghartz, JN ;

Edelstein, DC ;

Jenkins, KA ;

Kwark, YH .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (10) :1961-1968

[2] Advanced passive devices for enhanced integrated RF circuit performance [J].

Coolbaugh, D ;

Eshun, E ;

Groves, R ;

Harame, D ;

Johnson, J ;

Hammad, M ;

He, Z ;

Ramachandran, V ;

Stein, K ;

St Onge, S ;

Subbanna, S ;

Wang, D ;

Volant, R ;

Wang, X ;

Watson, K .

2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, :341-344

[3] Super compact RFIC inductors in 0.18μm CMOS with copper interconnects [J].

Feng, H ;

Jelodin, G ;

Gong, K ;

Zhan, R ;

Wu, Q ;

Chen, C ;

Wang, A .

2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, :443-446

[4] High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer [J].

Huo, X ;

Chen, KJ ;

Chan, PCH .

2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, :403-406

[5] Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric [J].

Huo, X ;

Chen, KJ ;

Chan, PCH .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (09) :520-522

[6] Improvements to performance of spiral inductors on insulators [J].

Kelly, D ;

Wright, F .

2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, :431-433

[7] High-Q factor three-dimensional inductors [J].

Piernas, B ;

Nishikawa, K ;

Kamogawa, K ;

Nakagawa, T ;

Araki, K .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (08) :1942-1949

[8]

RAMACHCHANDRAN R, 2002, IEEE T ADV PACKAGING, V25, P224

[9] Substrate crosstalk reduction using SOI technology [J].

Raskin, JP ;

Viviani, A ;

Flandre, D ;

Colinge, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (12) :2252-2261

[10]

ZAMDMER N, 2002, IEEE ESSDERC SEP, P511

← 1 2 →