Electronic and structural studies of immobilized thiol-derivatized cobalt porphyrins on gold surfaces

被引:36
作者
Berner, Simon
Lidbaum, Hans
Ledung, Greger
Ahlund, John
Nilson, Katharina
Schiessling, Joachim
Gelius, Ulrik
Baeckvall, Jan-E.
Puglia, Carla
Oscarsson, Sven
机构
[1] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland
[2] Univ Uppsala, Dept Phys, S-75121 Uppsala, Sweden
[3] Malardalen Univ, Dept Biol & Chem Engn, S-63105 Eskilstuna, Sweden
[4] Univ Stockholm, Dept Organ Chem, Arrhenius Lab, S-10691 Stockholm, Sweden
关键词
porphyrin; thiol-functionalized; immobilization; scanning tunnelling microscopy; x-ray photoelectron spectroscopy;
D O I
10.1016/j.apsusc.2007.03.066
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The immobilisation of thiol-derivatized cobalt porphyrins on gold surfaces has been studied in detail by means of combined scanning tunnelling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). S-thioacetyl has been used as a protective group for the thiol. Different routes for deprotection of the acetyl groups were performed in acidic and in basic conditions. The results show the formation of monolayer films for the different preparation schemes. The immobilisation of the molecules on the gold surface takes place through the thiol-linkers by the formation of multiple thiolate bonds. In the case of layers formed with protected porphyrins approximately 60% of the linkers are bonded to the gold surface whereas for deprotected layers the amount of bonded linkers is increased up to about 80%. STM measurements revealed that the molecules arrange in a disordered overlayer and do not exhibit mobility on the gold surface. Annealing experiments have been performed in order to test the stability of the porphyrin layers. Disordered patterns have been observed in the STM images after annealing at T= 400 degrees C. XPS revealed that the sulphur content disappeared completely after annealing at T= 180 degrees C and that the molecules did undergo significant modifications. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:7540 / 7548
页数:9
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