The temperature-dependence of threshold voltage of n-MOSFETs with nonuniform substrate doping

被引：7

作者：

Chen, HH ^{[1
]}

Tseng, SH ^{[1
]}

Gong, J ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 10期

关键词：

D O I：

10.1016/S0038-1101(98)00155-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the temperature effect on threshold voltage of a MOSFET with nonuniformly doped substrate is discussed. The concept of threshold surface potential is adopted so as to take the freeze out effect into consideration and to calculate the threshold voltage as a function of temperature. A new method of extracting the threshold voltage from experimental data, based on the definition of threshold surface potential, is also proposed. The extracted values fit well with the calculated threshold voltages in the temperature range of 80 to 300 K. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1799 / 1805

页数：7

共 17 条

[1] THE EFFECT OF CHANNEL IMPLANTS ON MOS-TRANSISTOR CHARACTERIZATION
BOOTH, RV
WHITE, MH
WONG, HS
KRUTSICK, TJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) : 2501 - 2509
[2] THRESHOLD SHIFTS DUE TO NONUNIFORM DOPING PROFILES IN SURFACE CHANNEL MOSFETS
BREWS, JR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1696 - 1710
[3] CARRIER MOBILITIES IN SILICON SEMI-EMPIRICALLY RELATED TO TEMPERATURE, DOPING AND INJECTION LEVEL
DORKEL, JM
LETURCQ, P
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (09) : 821 - 825
[4] GENERALIZED MOBILITY LAW FOR DRAIN CURRENT MODELING IN SI MOS-TRANSISTORS FROM LIQUID-HELIUM TO ROOM TEMPERATURES
EMRANI, A
BALESTRA, F
GHIBAUDO, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) : 564 - 569
[5] FJELDLY TA, 1993, IEEE T ELECTRON DEV, V40, P1
[6] IMPACT OF LDD STRUCTURES ON THE OPERATION OF SILICON MOSFETS AT LOW-TEMPERATURE
HAFEZ, IM
GHIBAUDO, G
BALESTRA, F
HAOND, M
[J]. SOLID-STATE ELECTRONICS, 1995, 38 (02) : 419 - 424
[7] A TWO-DIMENSIONAL ANALYTICAL THRESHOLD VOLTAGE MODEL FOR MOSFETS WITH ARBITRARILY DOPED SUBSTRATES
KENDALL, JD
BOOTHROYD, AR
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 401 - 403
[8] A UNIFIED MOBILITY MODEL FOR DEVICE SIMULATION .2. TEMPERATURE-DEPENDENCE OF CARRIER MOBILITY AND LIFETIME
KLAASSEN, DBM
[J]. SOLID-STATE ELECTRONICS, 1992, 35 (07) : 961 - 967
[9] IONIZATION OF IMPURITIES IN SILICON
KUZMICZ, W
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (12) : 1223 - 1227
[10] ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS
LEE, HS
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1407 - 1417

← 1 2 →