The optimum condition of GaxIn1-xP/GaAs1-yPy strain compensation for excessive strained In0.15GaAs MQWs in 1000 nm infrared light-emitting diode

Optimum conditions of GaxIn1-xP/GaAs1-yPy strain compensation structure were investigated to improve excessive compressive strain in In0.15Ga0.85 As based lighting-emitting diodes with 1000 nm emission wavelength. The GaAs(1-y)P(y )material, where only tensile strain is present, was used as a quantum barrier for compensating compressive strain of a In0.15Ga0.85As quantum well. The GaxIn1-xP strain material, which has both tensile and compressive strain, was used as a strain tuning barrier in order to improve unbalanced strain in In0.15GaAs/GaAsP0.09 MQWs. Subsequent photoluminescence (PL) measurements, indicated that the GaAsP0.09 tensile strain barrier was effective in compensating compressive strain of the In0.07GaAs quantum wells. Furthermore, noticeable PL intensity was observed from In0.15GaAs/GaAsP0.09 MQWs with the conditioned Ga0.53In0.47P strain tuning barrier. A fabricated IR-LED containing In0.15GaAs based MQWs with optimized Ga0.53In0.47P/GaAsP0.09 strain compensation barriers displayed 110% higher light output-power than a conventional LED. This result suggests that using of GaAsP0.09 and Ga0.53In0.47P as tensile strain barriers effectively compensates excessive compressive strain of In0.15GaAs based MQWs with a 1000 nm emission wavelength.