Influence of the oxygen content in obtaining tunable and strong photoluminescence from low-temperature grown silicon oxycarbide films

被引：12

作者：

Lin, Zhenxu ^{[1
,2
]}

Guo, Yanqing ^{[2
]}

Song, Chao ^{[2
]}

Song, Jie ^{[2
]}

Wang, Xiang ^{[2
]}

Zhang, Yi ^{[1
,2
]}

Huang, Rui ^{[2
]}

Huang, Xintang ^{[1
]}

机构：

[1] Cent China Normal Univ, Inst Nanosci & Nanotechnol, Wuhan 430079, Peoples R China

[2] Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou 521041, Guangdong, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 633卷

基金：

中国国家自然科学基金;

关键词：

Photoluminescence; Si-based materials; Silicon oxycarbide; Plasma enhance chemical vapor deposition; SI; LIGHT; ELECTROLUMINESCENCE; MATRIX; DEFECT;

D O I：

10.1016/j.jallcom.2015.02.027

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Luminescent a-SiCxOy films were prepared at a low temperature of 150 degrees C by using very high frequency plasma enhanced chemical vapor deposition technique. The prepared a-SiCxOy films present remarkable photoluminescence with yellow to blue shifting emission when increasing the oxygen content from 29% to 44%. Interestingly, the light emissions in the visible region can be clearly observed with the naked eyes in a bright room. The structure and the chemical compositions of the films were further investigated by Raman spectroscopy and Fourier transform infrared absorption spectroscopy, respectively. Based on the PL results and the analyses of the bonding configurations of the films, the yellow emission is suggested from the Si-C related defect luminescent centers, while the blue emission is associated with Si-related oxygen defect luminescent centers. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：153 / 156

页数：4

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