The role of SiC as a diffusion barrier in the formation of graphene on Si(111)

被引：4

作者：

Pham, Trung T. ^{[1
,2
]}

Santos, Cristiane N. ^{[3
]}

Joucken, Frederic ^{[1
]}

Hackens, Benoit ^{[3
]}

Raskin, Jean-Pierre ^{[4
]}

Sporken, Robert ^{[1
]}

机构：

[1] Univ Namur FUNDP, Res Ctr Phys Matter & Radiat PMR, 61 Rue Bruxelles, B-5000 Namur, Belgium

[2] HCMC Univ Technol & Educ, Dept Phys, 01 Vo Van Ngan,Dist 9, Ho Chi Minh City, Vietnam

[3] Catholic Univ Louvain, Nanoscop Phys NAPS, IMCN, 2 Chemin Cyclotron, Louvain, Belgium

[4] Catholic Univ Louvain, Inst Informat & Commun Technol Elect & Appl Math, 3 Pl Levant, Louvain, Belgium

来源：

关键词：

Graphene on Si; Graphitic carbon; Si(111) substrate; Electron beam evaporation; EPITAXIAL GRAPHENE; GROWTH; SILICON; TEMPERATURE; SUBSTRATE; CRYSTAL; FILMS; C-60;

D O I：

10.1016/j.diamond.2016.04.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we investigate the role of SiC as a diffusion barrier for Si in the formation of graphene on Si(111) via direct deposition of solid-state carbon atoms in ultra-high vacuum. Therefore, various thicknesses of the SiC layer preformed on the Si substrates were produced in order to evaluate its influence on the quality of graphene formation at different substrate temperatures from 900 degrees C to 1100 degrees C. At a given temperature of 1100 degrees C, we found that a thicker SiC layer can suppress silicon-out diffusion from the substrate and improve the structural quality of the graphene layer. The samples were analyzed by low energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, and scanning tunneling microscopy. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：141 / 148

页数：8

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