Inhibition of neutron irradiation on oxidation stacking faults on the surface of Si wafers

被引：10

作者：

Li, YX

Ju, YL

Liu, CC

Xu, YS

Wang, HM

机构：

[1] Material Research Center, Hebei Institute of Technology

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 160卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(95)00432-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The generation of stacking faults (SF) during thermal oxidation of Czochralski Si (CZ-Si) were investigated. It has been shown that oxidation-induced stacking faults (OSF) have been retarded seriously in neutron-irradiated Si. Our studies suggest that the inhibition of OSF results from the interaction of neutron-irradiated defects with oxygen in Si.

引用

页码：250 / 252

页数：3