Investigating the Role of Niobium Pentoxide as Transparent Conductive Oxide layer on the Efficiency of Thin Film Amorphous Silicon Solar Cell

被引：0

作者：

Afzali, Maryam ^{[1
]}

Shahhoseini, Ali ^{[1
]}

Keshvari, Hamed ^{[1
]}

机构：

[1] Islamic Azad Univ, Qazvin Branch, Dept Elect Biomed & Mechatron Engn, Qazvin, Iran

来源：

2019 27TH IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE 2019) | 2019年

关键词：

Thin film amorphous silicon solar; Transparent conductive oxides; ITO; Nb2O5; IWO;

D O I：

10.1109/iraniancee.2019.8786764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, three different TCOs as a window layer growing on a typical a-Si:H n - i - p - p+ solar cell are separately compared. These layers are In2O3:Sn (ITO), Nb2O5, In2O3:W (IWO) respectively. Thickness of each layer is chosen in range of 50 to 150 nanometers. Nb2O5 is a new idea for window layer. In comparison with the other used materials, using Nb2O5 as a window layer in solar cell structure results higher open circuit voltage and Fill Factor therefore the efficiency is improved 2.7%.

引用

页码：54 / 59

页数：6

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