Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides

被引：7
作者：
Hardtdegen, H [1 ]
Kaluza, N
Steins, R
Cho, YS
Sofer, Z
Zorn, M
Haberland, K
Zettler, JT
机构：
[1] Res Ctr Juelich, Inst Thin Films & Interfaces, Ctr Nanoelect Informat Technol, D-52425 Julich, Germany
[2] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany
[3] LayTec Gesell Situ & Nanosensor MbH, D-10587 Berlin, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2005年 / 242卷 / 13期
关键词：
D O I：
10.1002/pssb.200541099
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper we will first report on the use of real-time determination of wafer temperature for transparent substrates. With this method we will study the unintentional influence of growth parameter variations on the surface temperature. The effect on nitride growth optimization will be discussed.
引用
收藏
页码：2581 / 2586
页数：6
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