Design and implementation of an inverse class-F power amplifier with 79 % efficiency by using a switch-based active device model

被引：16

作者：

Aflaki, Pouya ^{[1
]}

Negra, Renato ^{[1
]}

Ghannouchi, Fadhel M. ^{[1
]}

机构：

[1] Univ Calgary, Schulich Sch Engn, Dept Elect & Comp Engn, iRadio Lab, Calgary, AB T2N 1N4, Canada

来源：

2008 IEEE RADIO AND WIRELESS SYMPOSIUM, VOLS 1 AND 2 | 2008年

关键词：

power amplifier; switching-mode; inverse class-F PA; GaNHEMT; high efficiency;

D O I：

10.1109/RWS.2008.4463519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design and implementation of an inverse class-F power amplifier using a commercially available GaN 2 W power transistor. A switch-based model for this transistor was implemented in ADS and used to design this high efficiency amplifier. Simulation results with the developed model show drain efficiency of 79 %, more than 19 dB of large-signal gain for an output power of greater than 5 W at 1 GHz. These values are confirmed by measurements, showing the usefulness of the switch-based active device model for this type of switching-mode power amplifiers.

引用

页码：423 / 426

页数：4

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