Dielectric function analysis of ZnSe and CdSe using parametric semiconductor model

被引：4

作者：

Jung, Y. W.

Yoon, J. J.

Byun, J. S.

Kim, Y. D. ^{[1
]}

机构：

[1] Kyung Hee Univ, Nano Opt Property Lab, Seoul 130701, South Korea

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 3-4期

基金：

新加坡国家研究基金会;

关键词：

CdSe; ZnSe; ellipsometry; parametric model;

D O I：

10.1016/j.mejo.2007.07.038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the dielectric function spectra of ZnSe and CdSe at room temperature between 0.7 and 9eV obtained by vacuum ultraviolet ellipsometry measurement. We have observed the E-1, E-1 + Delta(1), E-2, E-2 + Delta(2), E'(0), E ''(0), and E'(1) bandgaps that had been predicted in previous theoretical calculation. The experimental data were analyzed with parametric semiconductor model which represents the dielectric function as sum of asymmetric critical point lineshapes. The traditional 2nd derivative method analysis was also performed to confirm the quality of parametric model fit. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：570 / 572

页数：3

共 6 条

[1] DETERMINATION OF THE OPTICAL-CONSTANTS OF ZNSE FILMS BY SPECTROSCOPIC ELLIPSOMETRY [J].