Effects of electron-phonon interaction in tunneling processes in nanostructures

被引：0

作者：

Arseyev, P. I. ^{[1
]}

Maslova, N. S. ^{[2
]}

机构：

[1] RAS, PN Lebedev Phys Inst, Leninskii Pr 53, Moscow 119991, Russia

[2] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia

来源：

INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NO 5 | 2007年 / 6卷 / 05期

关键词：

tunneling; electron-phonon interaction;

D O I：

10.1142/S0219581X07004535

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Tunneling through a system with two discrete electron levels coupled by electron-phonon interaction is considered. The interplay between elastic and inelastic tunneling channels is analyzed for a strong electron-phonon coupling in the resonant case. It is shown that the intensity and the width of peaks in tunneling conductivity are strongly influenced by nonequilibrium effects.

引用

页码：411 / +

页数：2

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