Ultrafast deposition of microcrystalline Si by thermal plasma chemical vapor deposition

被引：22

作者：

Chae, YK ^{[1
]}

Ohno, H ^{[1
]}

Eguchi, K ^{[1
]}

Yoshida, T ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 12期

关键词：

D O I：

10.1063/1.1370365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This research is an attempt to apply thermal plasma chemical vapor deposition for the ultrafast deposition of Si films for solar cells. The improvement of stability, controllability, and cleanliness of the process enabled the deposition of muc-Si films at the ultrafast rate of over 1000 nm/s. Moreover, a minimum defect density of 7.2 x 10(16) cm(-3) was achieved. Monte-Carlo simulation and step coverage analysis suggested that the precursor is an approximately 1 nm cluster with a sticking probability of about 0.6. The success of this research may change the established concepts of Si deposition technology. (C) 2001 American Institute of Physics.

引用

页码：8311 / 8315

页数：5

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