Effects of substrate residue on the frequency response of high-tone bulk acoustic resonator

被引：0
|
作者：
Lin, Re-Ching [1 ]
Chen, Ying-Chung [1 ]
Hsieh, Po-Tsung [1 ]
Kan, Kuo-Sheng [2 ]
Wang, Chih-Ming [3 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung, Taiwan
[2] SHU TE Univ, Dept Comp & Commun, Kaohsiung, Taiwan
[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung, Taiwan
来源：
PROCEEDINGS OF THE 2007 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM-JOINTLY WITH THE 21ST EUROPEAN FREQUENCY AND TIME FORUM, VOLS 1-4 | 2007年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high-tone bulk acoustic resonator (HBAR), consisted of a Mo/ZnO/Pt/Ti/Si structure, is fabricated. The thickness of Si substrate under HBAR is controlled by a two-step process of wet- and dry-etching. The resonance frequency spacing (Delta f) of BBAR is dependent on the etching duration. The frequency response of the HBAR is measured using an HP8720 network analyzer and a CASCADE probe station. The estimation of Si residue based on the high-tone resonant phenomenon coincides with practical measurements. A frequency response with no harmonic resonance, which is an extreme case of HBAR without Si residue, is revealed. Furthermore, a sensor of high-frequency bulk acoustic wave resonator is obtained.
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页码：695 / +
页数：2
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