Surface structure of In/Si(111) studied by reflection high-energy positron diffraction

被引：6

作者：

Hashimoto, M. ^{[1
]}

Fukaya, Y. ^{[1
]}

Kawasuso, A. ^{[1
]}

Ichimiya, A. ^{[1
,2
]}

机构：

[1] Japan Atom Energy Agcy, Adv Sci Res Ctr, Takasaki, Gunma 3701292, Japan

[2] Japan Womens Univ, Fac Sci, Bunkyo Ku, Tokyo 1128681, Japan

来源：

SURFACE SCIENCE | 2007年 / 601卷 / 22期

关键词：

surface structure; reflection high-energy positron diffraction; total reflection; silicon; indium;

D O I：

10.1016/j.susc.2007.04.242

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated a quasi-one-dimensional structure of In/Si(111) surface using reflection high-energy positron diffraction (RHEPD), which is sensitive to the topmost surface structure under the total reflection condition. From the rocking curves, we found that In atoms are located at two different vertical positions, i.e., 0.99 angstrom and 0.55 angstrom from the Si zigzag chain in both 4 x 1 (210 K) and 8 x 2 (60 K) phases. (C) 2007 Published by Elsevier B.V.

引用

页码：5192 / 5194

页数：3

共 29 条

[21] INDIUM-INDUCED RECONSTRUCTIONS OF THE SI(111) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY [J].

NOGAMI, J ;

PARK, SI ;

QUATE, CF .

PHYSICAL REVIEW B, 1987, 36 (11) :6221-6224

[22] COMPLEX LATTICE POTENTIALS IN ELECTRON DIFFRACTION CALCULATED FOR A NUMBER OF CRYSTALS [J].

RADI, G .

ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1970, A 26 :41-&

[23] Angle-resolved high-resolution electron-energy-loss study of In-adsorbed Si(111)-(4x1) and -(8x2) surfaces [J].

Sakamoto, K ;

Ashima, H ;

Yeom, HW ;

Uchida, W .

PHYSICAL REVIEW B, 2000, 62 (15) :9923-9926

[24] Surface-state electrical conductivity at a metal-insulator transition on silicon [J].

Tanikawa, T ;

Matsuda, I ;

Kanagawa, T ;

Hasegawa, S .

PHYSICAL REVIEW LETTERS, 2004, 93 (01) :016801-1

[25]

Tanikawa T, 2003, E J SURF SCI NANOTEC, V1, P50, DOI DOI 10.1380/EJSSNT.2003.50

[26] Atomic and electronic structure of the (4x1) and (8x2) In/Si(111) surfaces [J].

Tsay, SF .

PHYSICAL REVIEW B, 2005, 71 (03)

[27] Semi-phenomenological model for (4 x 1) to (8 x "2") phase transition of in-adsorbed Si(111) surface [J].

Yagi, Y ;

Yoshimori, A .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2005, 74 (03) :831-834

[28] Instability and charge density wave of metallic quantum chains on a silicon surface [J].

Yeom, HW ;

Takeda, S ;

Rotenberg, E ;

Matsuda, I ;

Horikoshi, K ;

Schaefer, J ;

Lee, CM ;

Kevan, SD ;

Ohta, T ;

Nagao, T ;

Hasegawa, S .

PHYSICAL REVIEW LETTERS, 1999, 82 (24) :4898-4901

[29] Nature of the broken-symmetry phase of the one-dimensional metallic In/Si(111) surface [J].

Yeom, HW ;

Horikoshi, K ;

Zhang, HM ;

Ono, K ;

Uhrberg, RIG .

PHYSICAL REVIEW B, 2002, 65 (24) :2413071-2413074

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