Surface structure of In/Si(111) studied by reflection high-energy positron diffraction

被引：6

作者：

Hashimoto, M. ^{[1
]}

Fukaya, Y. ^{[1
]}

Kawasuso, A. ^{[1
]}

Ichimiya, A. ^{[1
,2
]}

机构：

[1] Japan Atom Energy Agcy, Adv Sci Res Ctr, Takasaki, Gunma 3701292, Japan

[2] Japan Womens Univ, Fac Sci, Bunkyo Ku, Tokyo 1128681, Japan

来源：

SURFACE SCIENCE | 2007年 / 601卷 / 22期

关键词：

surface structure; reflection high-energy positron diffraction; total reflection; silicon; indium;

D O I：

10.1016/j.susc.2007.04.242

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated a quasi-one-dimensional structure of In/Si(111) surface using reflection high-energy positron diffraction (RHEPD), which is sensitive to the topmost surface structure under the total reflection condition. From the rocking curves, we found that In atoms are located at two different vertical positions, i.e., 0.99 angstrom and 0.55 angstrom from the Si zigzag chain in both 4 x 1 (210 K) and 8 x 2 (60 K) phases. (C) 2007 Published by Elsevier B.V.

引用

页码：5192 / 5194

页数：3

共 29 条

[11] Si(111)-(7x7) surface probed by reflection high-energy positron diffraction [J].

Kawasuso, A ;

Fukaya, Y ;

Hayashi, K ;

Maekawa, M ;

Okada, S ;

Ichimiya, A .

PHYSICAL REVIEW B, 2003, 68 (24)

[12] A coherent positron beam for reflection high-energy positron diffraction [J].

Kawasuso, A ;

Ishimoto, T ;

Maekawa, M ;

Fukaya, Y ;

Hayashi, K ;

Ichimiya, A .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (11) :4585-4588

[13] Reflection high energy positron diffraction from a Si(111) surface [J].

Kawasuso, A ;

Okada, S .

PHYSICAL REVIEW LETTERS, 1998, 81 (13) :2695-2698

[14] Low-temperature structure of indium quantum chains on silicon [J].

Kumpf, C ;

Bunk, O ;

Zeysing, JH ;

Su, Y ;

Nielsen, M ;

Johnson, RL ;

Feidenhans'l, R ;

Bechgaard, K .

PHYSICAL REVIEW LETTERS, 2000, 85 (23) :4916-4919

[15] SURFACE REACTIONS OF SILICON (3) WITH ALUMINUM AND INDIUM [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1706-&

[16] Reconstruction of quasi-one-dimensional In/Si(111) systems:: Charge- and spin-density waves versus bonding -: art. no. 035430 [J].

López-Lozano, X ;

Krivosheeva, A ;

Stekolnikov, AA ;

Meza-Montes, L ;

Noguez, C ;

Furthmüller, J ;

Bechstedt, F .

PHYSICAL REVIEW B, 2006, 73 (03)

[17] Atomic geometry, electronic structure and image state for the Si(111)-In(4 x 1) nanowire [J].

Miwa, RH ;

Srivastava, GP .

SURFACE SCIENCE, 2001, 473 (1-2) :123-132

[18] Structural determination of indium-induced Si(111) reconstructed surfaces by LEED analysis:: (√3x√3)R30° and (4x1) -: art. no. 195410 [J].

Mizuno, S ;

Mizuno, YO ;

Tochihara, H .

PHYSICAL REVIEW B, 2003, 67 (19)

[19] Anisotropic electronic structure of the Si(111)-(4x1)In surface [J].

Nakamura, J ;

Watanabe, S ;

Aono, M .

PHYSICAL REVIEW B, 2001, 63 (19)

[20] STRUCTURE-ANALYSIS OF THE SINGLE-DOMAIN SI(111)4 X 1-IN SURFACE BY MU-PROBE AUGER-ELECTRON DIFFRACTION AND MU-PROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

NAKAMURA, N ;

ANNO, K ;

KONO, S .

SURFACE SCIENCE, 1991, 256 (1-2) :129-134

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