Feasibility of static induction transistor with organic semiconductors

被引:32
|
作者
Zorba, S [1 ]
Gao, YL [1 ]
机构
[1] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1906306
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have fabricated and studied static induction transistors (SITs) with various organic semiconductor materials, such as pentacene, perylene, trissquinoline-8-hydroxylatedaluminum (Alq), and N,N'-dis4-methylphenyld-N, N8-diphenylbenzidine (TPD), used as the active element. The former two resulted in unsuccessful operation due to a short caused by pinholes formed in the films. Modification of the deposition rates did not change the outcome. The latter two provided successful operation. No fatal pinholes were observed in the thin films of the latter two. It is thus shown that the morphology has crucial effect in the operation of SITs. A transition from linear to nonlinear behavior has been observed in the drain-source I-V characteristics of Alq and TPD. (c) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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