Low-Operating-Voltage Operation and Improvement in Sensitivity With Passivated OFET Sensors for Determining Total Dose Radiation

被引：12

作者：

Raval, Harshil N. ^{[1
]}

Rao, V. Ramgopal ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Ctr Excellence Nanoelect, Bombay 400076, Maharashtra, India

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 12期

关键词：

Array of organic field-effect transistor (OFET) sensors; improved sensitivity; ionizing radiation; FIELD-EFFECT TRANSISTOR; GATE; PERFORMANCE; ELECTRON; MOBILITY;

D O I：

10.1109/LED.2010.2074179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using high-k material in a gate dielectric stack, low-operating-voltage organic semiconducting material sensors for determining total dose radiation are proposed. To improve the stability of organic semiconducting layer in the atmospheric conditions, a thin silicon nitride layer deposited by hot-wire CVD process was used as a passivation layer. Furthermore, in order to achieve higher sensitivity, a parallel connection of organic field-effect transistors (OFETs) is explored in this letter. These sensors are exposed to ionizing radiation using a cobalt-60 radiation source for different total dose values. A three-times improvement in sensitivity was observed in the OFF current with a three-OFET array.

引用

页码：1482 / 1484

页数：3

共 16 条

[1] A polymer/fullerene based photodetector with extremely low dark current for x-ray medical imaging applications [J].

Agostinelli, T. ;

Campoy-Quiles, M. ;

Blakesley, J. C. ;

Speller, R. ;

Bradley, D. D. C. ;

Nelson, J. .

APPLIED PHYSICS LETTERS, 2008, 93 (20)

[2] Explosive vapor sensor using poly (3-hexylthiophene) and CuII tetraphenylporphyrin composite based organic field effect transistors [J].

Dudhe, Ravishankar S. ;

Tiwari, S. P. ;

Raval, Harshil N. ;

Khaderbad, Mrunal A. ;

Singh, Rahul ;

Sinha, Jasmine ;

Yedukondalu, M. ;

Ravikanth, M. ;

Kumar, Anil ;

Rao, V. Ramgopal .

APPLIED PHYSICS LETTERS, 2008, 93 (26)

[3] X-ray stability and response of polymeric photodiodes for imaging applications [J].

Keivanidis, Panagiotis E. ;

Greenham, Neil C. ;

Sirringhaus, Henning ;

Friend, Richard H. ;

Blakesley, James C. ;

Speller, Robert ;

Campoy-Quiles, Mariano ;

Agostinelli, Tiziano ;

Bradley, Donal D. C. ;

Nelson, Jenny .

APPLIED PHYSICS LETTERS, 2008, 92 (02)

[4] Radiation Detection: Resistivity Responses in Functional Poly(Olefin Sulfone)/Carbon Nanotube Composites [J].

Lobez, Jose M. ;

Swager, Timothy M. .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2010, 49 (01) :95-98

[5] Determining ionizing radiation using sensors based on organic semiconducting material [J].

Raval, Harshil N. ;

Tiwari, Shree Prakash ;

Navan, Ramesh R. ;

Rao, V. Ramgopal .

APPLIED PHYSICS LETTERS, 2009, 94 (12)

[6] Modeling of the reverse characteristics of a-Si:H TFTs [J].

Servati, P ;

Nathan, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (05) :812-819

[7] Low dose ionizing radiation detection using conjugated polymers [J].

Silva, EAB ;

Borin, JF ;

Nicolucci, P ;

Graeff, CFO ;

Netto, TG ;

Bianchi, RF .

APPLIED PHYSICS LETTERS, 2005, 86 (13) :1-3

[8] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].

SUN, SC ;

PLUMMER, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1497-1508

[9]

THOMAS DA, 2006, Patent No. 7141839

[10] Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric [J].

Tiwari, S. P. ;

Sninivas, P. ;

Shriram, S. ;

Kale, Nitin S. ;

Mhaisalkar, S. G. ;

Rao, V. Ramgopal .

THIN SOLID FILMS, 2008, 516 (05) :770-772

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