Adsorption-controllable channel conductivity in oxidized porous silicon

被引：2

作者：

Demidovich, VM ^{[1
]}

Demidovich, GB ^{[1
]}

Kozlov, SN ^{[1
]}

Petrov, AA ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Moscow 117234, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 01期

关键词：

Silicon; Porous Silicon; Ionic Charge; Channel Conductivity; Fractal Material;

D O I：

10.1134/1.1261991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that an adsorption field acting on a silicon-oxidized-porous-silicon-metal structure can create a "frozen" state with conductivity increased by a factor of hundreds or thousands. The effect is associated with the modulation of the channel conductivity of oxidized silicon filaments of fractal material by ionic charge migrating along the surface of the oxidized layer. (C) 1998 American Institute of Physics. [S1063-7850(98)02301-5].

引用

页码：53 / 54

页数：2

共 5 条

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[4]

KOZLOV SN, 1985, MIKROELEKTRONIKA, V14, P556

[5]

VOLKENSHTEIN FF, 1973, PHYSICAL CHEM SEMICO

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