Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study

被引：6

作者：

Dagnelund, D. ^{[1
]}

Vorona, I. P. ^{[1
,2
]}

Nosenko, G. ^{[1
,2
]}

Wang, X. J. ^{[1
,3
]}

Tu, C. W. ^{[4
]}

Yonezu, H. ^{[5
]}

Polimeni, A. ^{[6
,7
]}

Capizzi, M. ^{[6
,7
]}

Chen, W. M. ^{[1
]}

Buyanova, I. A. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[2] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[4] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[5] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

[6] Univ Roma La Sapienza, INFM, I-00185 Rome, Italy

[7] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 02期

基金：

瑞典研究理事会;

关键词：

SILICON; NEUTRALIZATION; MECHANISM; ACCEPTOR;

D O I：

10.1063/1.3676576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga-i) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga-i-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed. (C) 2012 American Institute of Physics. [doi:10.1063/1.3676576]

引用

页数：6

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