Barrier/bonding layers on bismuth telluride (Bi2Te3) for high temperature thermoelectric modules

被引：76

作者：

Lin, Wen P. ^{[1
]}

Wesolowski, Daniel E. ^{[2
]}

Lee, Chin C. ^{[1
]}

机构：

[1] Univ Calif Irvine, Irvine, CA 92697 USA

[2] Sandia Natl Labs, Power Sources Technol Grp, Albuquerque, NM 87185 USA

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2011年 / 22卷 / 09期

关键词：

DEVICES;

D O I：

10.1007/s10854-011-0306-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this research, a fundamental study is conducted to identify the materials and develop the processes for producing barrier/bonding composite on Bi2Te3 for high temperature thermoelectric applications. The composite must meet four basic requirements: (a) prevent inter-diffusion between the electrode material, for our design, silver(Ag) and Bi2Te3, (b) bond well to Bi2Te3, (c) bond well to Ag electrode, and (d) do not themselves diffuse into Bi2Te3. The composites investigated include palladium (Pd), nickel/gold (Ni/Au), Ag, and titanium/gold (Ti/Au). After annealing at 250 A degrees C for 200 h, only the Ti/Au design meets all four requirements. The thickness of Ti and Au, respectively, is only 100 nm. Other than meeting these four requirements, the Ti/Au layers exhibit excellent step coverage on the rough Bi2Te3 surface even after the annealing process.

引用

页码：1313 / 1320

页数：8

共 17 条

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