A Diode Pumped Middle Infrared Laser Based on Ho: GdVO4 Crystal

被引：7

作者：

Ding, Yu ^{[1
,2
]}

Liu, Tongyu ^{[2
]}

Yan, Mengmeng ^{[2
]}

机构：

[1] Harbin Engn Univ, Sch Phys & Optoelect Engn, Harbin 150001, Peoples R China

[2] Sci & Technol Elect Opt Informat Secur Control, Tianjin 300308, Peoples R China

来源：

APPLIED SCIENCES-BASEL | 2021年 / 11卷 / 23期

关键词：

middle infrared band; diode-pumped laser; Ho; GdVO4; crystal; EFFICIENT CONTINUOUS-WAVE; OPERATION;

D O I：

10.3390/app112311537

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ho: GdVO4 crystal is the host material for the production of laser working in the middle infrared range. In this contribution, the characteristic parameters of the Ho: GdVO4 crystal were measured, and the material was used as a gain medium to build a diode-pumped laser for the first time, to reach a laser output at 2047.9 nm. The output beam quality factor M-2 was measured to be 1.4 and 1.3 in x-direction and y-direction, respectively. In addition, the influence of the transmittance of the output mirror on the generation of laser was obtained through exploration. The results showed that the laser wavelength blue-shifted as the output transmittance increased.

引用

页数：7

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