Design and development of a piezoresistive pressure sensor on micromachined silicon for high-temperature applications and of a signal-conditioning electronic circuit

被引：5

作者：

Crescini, D

Ferrari, V

Vajna, ZK

Marioli, D

Taroni, A

Borgese, A

Marinelli, M

Milani, E

Paoletti, A

Tucciarone, A

Verona-Rinati, G

机构：

[1] Univ Brescia, Dipartimento Elettron Automaz, I-25123 Brescia, Italy

[2] Univ Brescia, INFM, Fac Ingn, I-25123 Brescia, Italy

[3] Univ Roma Tor Vergata, Rome, Italy

来源：

MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2003年 / 9卷 / 6-7期

关键词：

D O I：

10.1007/s00542-002-0288-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The deposition of diamond films on silicon substrate by MWPECVD is described and microstructural characteristics of the obtained films are reported. The resistive and piezoresistive properties of the diamond-on-silicon films have been measured beyond 200 degreesC by means of a purposely developed apparatus, and experimental results are reported. The piezoresistive properties at high temperature are exploited in the development of a micromachined pressure sensor capable of operating at up to 350-380 degreesC. A dedicated signal-conditioning electronic circuit is being designed and its functioning principle is here described.

引用

页码：431 / 435

页数：5

共 7 条

[1] PIEZORESISTIVITY IN VAPOR-DEPOSITED DIAMOND FILMS [J].