Processing of a novel multilayered silicon nitride

被引:40
作者
Shigegaki, Y [1 ]
Brito, ME [1 ]
Hirao, K [1 ]
Toriyama, M [1 ]
Kanzaki, S [1 ]
机构
[1] NATL IND RES INST NAGOYA,NAGOYA,AICHI 462,JAPAN
关键词
D O I
10.1111/j.1151-2916.1996.tb08959.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A new type of silicon nitride with a layered structure of alternating dense and porous layers was obtained by addition of beta-Si3N4 whiskers to the porous layers, The materials consisted of dense layers 60 mu m thick and porous layers 40 mu m thick with a final porosity of about 30%, Highly anisotropic shrinkage behavior was observed during sintering, A large addition of whiskers to the porous layers resulted in layers with well-oriented and tightly tangled elongated grains, where porosity is represented by anisotropic shaped pores.
引用
收藏
页码:2197 / 2200
页数:4
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