Study of Rashba Spin-Orbit Field at LaAlO3/SrTiO3 Heterointerfaces

被引：2

作者：

Jin, Mi-Jin ^{[1
]}

Kim, Shin-Ik ^{[2
]}

Moon, Seon Young ^{[2
]}

Choe, Daeseong ^{[1
]}

Park, Jungmin ^{[1
]}

Modepalli, Vijayakumar ^{[1
]}

Jo, Junhyeon ^{[1
]}

Oh, Inseon ^{[1
]}

Baek, Seung-Hyub ^{[2
,3
]}

Yoo, Jung-Woo ^{[1
]}

机构：

[1] Ulsan Natl Inst Sci & Technol, Sch Mat Sci & Engn, Ulsan 44919, South Korea

[2] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 02792, South Korea

[3] Korea Univ Sci & Technol, KIST Sch, Div Nano & Informat Technol, Seoul 02792, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2019年 / 48卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

LAO/STO; conductive oxide interface; Rashba spin-orbit interaction; spin-orbitronics; oxide spintronics; ELECTRON-GAS; SUPERCONDUCTIVITY; FERROMAGNETISM; COEXISTENCE; CONVERSION; INTERFACE; LAYER;

D O I：

10.1007/s11664-018-6788-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oxide interfaces such as LaAlO3/SrTiO3 (LAO/STO) are interesting platforms for the investigation of 'spin-orbitronics' because of their strongly coupled spin and orbital degrees of freedom due to the inversion asymmetry of the structure. In this investigation, we demonstrate a tunable Rashba spin-orbit field at the LAO/STO interface via the application of an external gate electric field. The strength of the Rashba field was indirectly estimated by measuring the planar angle dependence of the anisotropic magnetoresistance (AMR). The asymmetry of the planar AMR between theta = 0 and pi indicates the existence of Rashba spin-orbit fields, which are tunable by adjusting the current density and gate electric field. From the AMR measurements, the effective Rashba field exhibits up to 4 T for the application of an external back-gate voltage of 30 V. This controllable and relatively high Rashba field suggests that the LAO/STO is an attractive 2-D interface for potential spin-orbitronic applications, such as spin-charge converters, spin-FETs, and spin-orbit torque devices.

引用

页码：1347 / 1352

页数：6

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