In situ SiN passivation of AlInN/GaN heterostructures by MOVPE

被引：8

作者：

Behmenburg, H. ^{[1
]}

Khoshroo, L. Rahimzadeh ^{[1
]}

Mauder, C. ^{[1
]}

Ketteniss, N. ^{[1
]}

Lee, K. H. ^{[1
]}

Eickelkamp, M. ^{[1
]}

Brast, M. ^{[1
]}

Fahle, D. ^{[1
]}

Woitok, J. F. ^{[2
]}

Vescan, A. ^{[1
]}

Kalisch, H. ^{[1
]}

Heuken, M. ^{[1
,3
]}

Jansen, R. H. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, ITHE, Kackertstr 15-17, D-52072 Aachen, Germany

[2] PANalyt, Almelo NL-7600, Netherlands

[3] AIXTRON AG, Herzogenrath D-52134, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

AlInN/GaN; MOVPE; passivation; electrical properties; high mobility transistors;

D O I：

10.1002/pssc.200983599

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

AlInN is being considered to replace AlGaN as barrier material in high-electron mobility transistors (HEMT) mainly due to the possibility to downscale the barrier layer thickness at coexistent higher drain current density. However, the stability of surface conditions which can strongly influence the electrical properties of the device has to be assured. In situ deposition of a SiN passivation layer by metal-organic vapour phase epitaxy (MOVPE) is therefore a promising candidate to improve the device structure. In this paper, heterostructures with thin AlInN barrier passivated by in situ deposition of SiN layers of different thicknesses are presented. As expected, deterioration of the sheet resistance (R-Sh) was observed for the reference sample without SiN passivation layer by continuously performed RSh mappings of the investigated wafer. This change is noticeably reduced for samples with in situ SiN passivation layer. A comparison of two wafers, stored either with or without air exposure, reveals oxidation as presumable reason for the deterioration. Further, results from RSh measurements on processed wafers indicate an enhanced RSh stability during process for SiN-capped samples. (c) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

共 10 条

[1] Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures [J].

Ambacher, O ;

Majewski, J ;

Miskys, C ;

Link, A ;

Hermann, M ;

Eickhoff, M ;

Stutzmann, M ;

Bernardini, F ;

Fiorentini, V ;

Tilak, V ;

Schaff, B ;

Eastman, LF .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) :3399-3434

[2] Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer -: art. no. 054501 [J].

Derluyn, J ;

Boeykens, S ;

Cheng, K ;

Vandersmissen, R ;

Das, J ;

Ruythooren, W ;

Degroote, S ;

Leys, MR ;

Germain, M ;

Borghs, G .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)

[3] A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors [J].

Higashiwaki, Masataka ;

Chen, Zhen ;

Chu, Rongming ;

Pei, Yi ;

Keller, Stacia ;

Mishra, Umesh K. ;

Hirose, Nobumitsu ;

Matsui, Toshiaki ;

Mimura, Takashi .

APPLIED PHYSICS LETTERS, 2009, 94 (05)

[4] Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-Gate devices [J].

Jessen, Gregg H. ;

Fitch, Robert C., Jr. ;

Gillespie, James K. ;

Via, Glen ;

Crespo, Antonio ;

Langley, Derrick ;

Denninghoff, Daniel J. ;

Trejo, Manuel, Jr. ;

Heller, Eric R. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (10) :2589-2597

[5] Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation [J].

Kim, H ;

Thompson, RM ;

Tilak, V ;

Prunty, TR ;

Shealy, JR ;

Eastman, LF .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (07) :421-423

[6]

Kohn E, 2007, PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, P311

[7] Power electronics on InAlN/(In)GaN:: Prospect for a record performance [J].

Kuzmík, J .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (11) :510-512

[8]

Medjdoub F, 2006, INT EL DEVICES MEET, P673

[9] Passivation of AlGaN/GaN heterostructures with silicon nitride for insulated gate transistors [J].

Prunty, TR ;

Smart, JA ;

Chumbes, EM ;

Ridley, BK ;

Eastman, LF ;

Shealy, JR .

2000 IEEE/CORNELL CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2000, :208-214

[10] The impact of surface states on the DC and RF characteristics of A1GaN/GaN HFETs [J].

Vetury, R ;

Zhang, NQQ ;

Keller, S ;

Mishra, UK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :560-566

← 1 →