Tetrahedrally bonded amorphous carbon for use in thin film transistors

被引：0

作者：

Milne, WI ^{[1
]}

Clough, FJ ^{[1
]}

Kleinsorge, B ^{[1
]}

Maeng, SL ^{[1
]}

Uchikoga, S ^{[1
]}

Robertson, J ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

PROCEEDINGS OF THE FOURTH SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES | 1999年 / 98卷 / 22期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper describes the preparation and optical and electrical properties of a novel form of semiconducting carbon thin film material known as tetrahedrally bonded amorphous carbon ( ta-C). The material is produced at room temperature using the Filtered Cathodic Are technique. The as-grown undoped ta-C is p-type in nature but it can be n-doped by the addition of nitrogen during deposition. Thin film transistor design and fabrication using ta-C as the active channel layer is also described.

引用

页码：299 / 308

页数：10

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