Effect of high-temperature annealing on the structural and optical properties of ZnO films

被引:41
作者
Wang, L [1 ]
Pu, Y [1 ]
Fang, WQ [1 ]
Dai, JN [1 ]
Zheng, CD [1 ]
Mo, CL [1 ]
Xiong, CB [1 ]
Jiang, FY [1 ]
机构
[1] Nanchang Univ, Educ Minist, Engn Res Ctr Luminescence Mat & Devices, Nanchang 330047, Peoples R China
关键词
zinc oxide; annealing; optical properties; X-ray diffraction;
D O I
10.1016/j.tsf.2005.05.048
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The annealing effect on the optical properties of ZnO epilayers was reported. The ZnO thin films were grown using metal organic chemical vapor deposition method, and annealed in atmosphere at 850 degrees C for different time periods. Double-crystal X-ray diffraction showed that, after annealing, the density of the edge-dislocations decreased dramatically upon annealing, however, the screw-dislocations were not affected significantly. Strong green photoluminescence was observed in the annealed ZnO films while the as-grown films showed only near band edge emission. The deterioration of the optical properties in the annealed film, however, only occurred near the film surface in a very thin layer. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:323 / 327
页数:5
相关论文
共 15 条
  • [1] Optically pumped lasing of ZnO at room temperature
    Bagnall, DM
    Chen, YF
    Zhu, Z
    Yao, T
    Koyama, S
    Shen, MY
    Goto, T
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2230 - 2232
  • [2] Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer
    Chen, YF
    Ko, HJ
    Hong, SK
    Yao, T
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (05) : 559 - 561
  • [3] Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements
    Chen, ZQ
    Yamamoto, S
    Maekawa, M
    Kawasuso, A
    Yuan, XL
    Sekiguchi, T
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) : 4807 - 4812
  • [4] Growth of high-quality epitaxial ZnO films on α-Al2O3
    Fons, P
    Iwata, K
    Niki, S
    Yamada, A
    Matsubara, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 627 - 632
  • [5] An oxide-diluted magnetic semiconductor: Mn-doped ZnO
    Fukumura, T
    Jin, ZW
    Ohtomo, A
    Koinuma, H
    Kawasaki, M
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (21) : 3366 - 3368
  • [6] Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495
  • [7] Variation of light emitting properties of ZnO thin films depending on post-annealing temperature
    Kang, HS
    Kang, JS
    Pang, SS
    Shim, ES
    Lee, SY
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 102 (1-3): : 313 - 316
  • [8] Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00.1)
    Park, WI
    An, SJ
    Yi, GC
    Jang, HM
    [J]. JOURNAL OF MATERIALS RESEARCH, 2001, 16 (05) : 1358 - 1362
  • [9] PARK WI, 2001, J ELECT MAT, V30, P32
  • [10] Determination of the azimuthal orientational spread of GaN films by x-ray diffraction
    Sun, YJ
    Brandt, O
    Liu, TY
    Trampert, A
    Ploog, KH
    Bläsing, J
    Krost, A
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (26) : 4928 - 4930