Nonvolatile resistive memory of ferrocene covalently bonded to reduced graphene oxide

被引：67

作者：

Jin, Changhua ^{[1
]}

Lee, Junghyun ^{[1
]}

Lee, Eunkyo ^{[1
]}

Hwang, Eunhee ^{[1
]}

Lee, Hyoyoung ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Natl Creat Res Initiat, Ctr Smart Mol Memory, Dept Chem,Samsung SKKU Graphene Ctr, Suwon 440746, Gyeonggi Do, South Korea

来源：

CHEMICAL COMMUNICATIONS | 2012年 / 48卷 / 35期

关键词：

PHOTOCONDUCTIVITY; TEMPERATURE; MOBILITY;

D O I：

10.1039/c2cc30973d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Recently, the number of studies concerning organic memory devices has grown rapidly due to increase in the demand for electronic devices. Among the organic memory devices, the development of organic nonvolatile memory materials and devices is becoming an important research topic due to their low power consumption.

引用

页码：4235 / 4237

页数：3

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