Giant magnetoresistance and tunnel magnetoresistance effects in FeCoGd-based spin valves and magnetic tunnel junctions

被引：8
|
作者：
Bai, X. J. [1 ]
Du, J. [1 ]
Zhang, J. [1 ]
You, B. [1 ]
Sun, L. [1 ]
Zhang, W. [1 ]
Wu, X. S. [1 ]
Tang, S. L. [1 ]
Hu, A. [1 ]
Hu, H. N. [2 ]
Zhou, S. M. [2 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期
关键词：
D O I：
10.1063/1.2830019
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) were studied in spin valves of FeCo/Cu/(FeCo)(1-x)Gd-x and magnetic tunnel junctions of FeCo/AlO/(FeCo)(1-x)Gd-x, respectively. When the FeCoGd layer is thick enough, both GMR and TMR ratios change their signs from positive to negative at the compensation composition with 0.293 <= x(0)<= 0.337 as the Gd content is increased. This scenario is originated from a competition of rare-earth and transition-metal spins in FeCoGd layers with antiferromagnetic coupling. Accordingly, it is deduced that in the FeCoGd layer the spin polarizations P-N of electrons at the Fermi level and tunneling spin polarization P-TSP are negative and positive for x < x(0), respectively, and vice versa for x>x(0). (C) 2008 American Institute of Physics.
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页数：3
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